Enhanced Mobility in MoS₂ Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects (2024)

Gupta, D., Upadhyay, S., Rana, A. S., Kumar, S., Deepika, Bharti, A., Malik, V. K., Sharma, S. K., Khanna, M. K., & Kumar, R. (Accepted/In press). Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects. Journal of Electronic Materials. https://doi.org/10.1007/s11664-024-11533-8

Gupta, Deepika ; Upadhyay, Sonica ; Rana, Abhimanyu Singh et al. / Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects. In: Journal of Electronic Materials. 2024.

@article{1ae1a066476046528c596c15a9e0734e,

title = "Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects",

abstract = "Molybdenum disulfide (MoS2) has been found to be a promising material for electronic and optoelectronic device applications due to its unique optical and electrical characteristics. However, the large-scale synthesis of MoS2 thin films is limited by challenges in achieving reproducible and uniform device fabrication. In the present study, we utilized a sputtering technique and post-treatment by ion beam irradiation for large-scale fabrication of uniform MoS2 thin films. The effects of the low-energy ion beam on the optical, structural, electrical transport, and morphological characteristics of the MoS2 thin films were studied by Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, and electrical transport analysis. Tuning the electrical and optical characteristics of few- and monolayer MoS2 through regulation of defects provides an excellent approach for fabricating two-dimensional (2D) MoS2 thin films for electronic device applications. Thin film transistors (TFTs) have been widely studied for driving active-matrix displays given their promising electrical characteristics including significant on/off current ratio and mobility. In the present work, we report a back-gate MoS2 TFT fabricated by sputtering. TFTs based on MoS2 thin films were fabricated, and the current–voltage characteristics were studied at room temperature, which confirmed that the transport behavior differed between the pristine and ion-irradiated samples. Pristine MoS2-based TFTs displayed significant Schottky barrier effects, resulting in lower mobility than ion-irradiated samples. Our comprehensive study focuses on the fundamental transport characteristics via the metal–MoS2interface, which represents a substantial step towards achieving highly efficient electronic devices based on 2D semiconductors.",

keywords = "AFM, low-energy ion beam, mobility, MoS, on/off current ratio, PL, Raman, Schottky barrier, sputtering, TFT, threshold voltage, XPS",

author = "Deepika Gupta and Sonica Upadhyay and Rana, {Abhimanyu Singh} and Satyendra Kumar and Deepika and Aniket Bharti and Malik, {Vivek Kumar} and Sharma, {Sanjay Kumar} and Khanna, {Manoj Kumar} and Rajesh Kumar",

note = "Publisher Copyright: {\textcopyright} The Minerals, Metals & Materials Society 2024.",

year = "2024",

doi = "10.1007/s11664-024-11533-8",

language = "אנגלית",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}

Gupta, D, Upadhyay, S, Rana, AS, Kumar, S, Deepika, Bharti, A, Malik, VK, Sharma, SK, Khanna, MK & Kumar, R 2024, 'Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects', Journal of Electronic Materials. https://doi.org/10.1007/s11664-024-11533-8

Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects. / Gupta, Deepika; Upadhyay, Sonica; Rana, Abhimanyu Singh et al.
In: Journal of Electronic Materials, 2024.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects

AU - Gupta, Deepika

AU - Upadhyay, Sonica

AU - Rana, Abhimanyu Singh

AU - Kumar, Satyendra

AU - Deepika,

AU - Bharti, Aniket

AU - Malik, Vivek Kumar

AU - Sharma, Sanjay Kumar

AU - Khanna, Manoj Kumar

AU - Kumar, Rajesh

N1 - Publisher Copyright:© The Minerals, Metals & Materials Society 2024.

PY - 2024

Y1 - 2024

N2 - Molybdenum disulfide (MoS2) has been found to be a promising material for electronic and optoelectronic device applications due to its unique optical and electrical characteristics. However, the large-scale synthesis of MoS2 thin films is limited by challenges in achieving reproducible and uniform device fabrication. In the present study, we utilized a sputtering technique and post-treatment by ion beam irradiation for large-scale fabrication of uniform MoS2 thin films. The effects of the low-energy ion beam on the optical, structural, electrical transport, and morphological characteristics of the MoS2 thin films were studied by Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, and electrical transport analysis. Tuning the electrical and optical characteristics of few- and monolayer MoS2 through regulation of defects provides an excellent approach for fabricating two-dimensional (2D) MoS2 thin films for electronic device applications. Thin film transistors (TFTs) have been widely studied for driving active-matrix displays given their promising electrical characteristics including significant on/off current ratio and mobility. In the present work, we report a back-gate MoS2 TFT fabricated by sputtering. TFTs based on MoS2 thin films were fabricated, and the current–voltage characteristics were studied at room temperature, which confirmed that the transport behavior differed between the pristine and ion-irradiated samples. Pristine MoS2-based TFTs displayed significant Schottky barrier effects, resulting in lower mobility than ion-irradiated samples. Our comprehensive study focuses on the fundamental transport characteristics via the metal–MoS2interface, which represents a substantial step towards achieving highly efficient electronic devices based on 2D semiconductors.

AB - Molybdenum disulfide (MoS2) has been found to be a promising material for electronic and optoelectronic device applications due to its unique optical and electrical characteristics. However, the large-scale synthesis of MoS2 thin films is limited by challenges in achieving reproducible and uniform device fabrication. In the present study, we utilized a sputtering technique and post-treatment by ion beam irradiation for large-scale fabrication of uniform MoS2 thin films. The effects of the low-energy ion beam on the optical, structural, electrical transport, and morphological characteristics of the MoS2 thin films were studied by Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, and electrical transport analysis. Tuning the electrical and optical characteristics of few- and monolayer MoS2 through regulation of defects provides an excellent approach for fabricating two-dimensional (2D) MoS2 thin films for electronic device applications. Thin film transistors (TFTs) have been widely studied for driving active-matrix displays given their promising electrical characteristics including significant on/off current ratio and mobility. In the present work, we report a back-gate MoS2 TFT fabricated by sputtering. TFTs based on MoS2 thin films were fabricated, and the current–voltage characteristics were studied at room temperature, which confirmed that the transport behavior differed between the pristine and ion-irradiated samples. Pristine MoS2-based TFTs displayed significant Schottky barrier effects, resulting in lower mobility than ion-irradiated samples. Our comprehensive study focuses on the fundamental transport characteristics via the metal–MoS2interface, which represents a substantial step towards achieving highly efficient electronic devices based on 2D semiconductors.

KW - AFM

KW - low-energy ion beam

KW - mobility

KW - MoS

KW - on/off current ratio

KW - PL

KW - Raman

KW - Schottky barrier

KW - sputtering

KW - TFT

KW - threshold voltage

KW - XPS

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U2 - 10.1007/s11664-024-11533-8

DO - 10.1007/s11664-024-11533-8

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AN - SCOPUS:85208561335

SN - 0361-5235

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -

Gupta D, Upadhyay S, Rana AS, Kumar S, Deepika, Bharti A et al. Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects. Journal of Electronic Materials. 2024. doi: 10.1007/s11664-024-11533-8